Semiconductor Engineering

Simulations of Silicon Spin Qubits Based on a GAAFET (Teikyo U., Riken)

A new technical paper, “Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor,” was ...
Nasdaq

Applied Materials Technologies Enable 2D Scaling with EUV and 3D Gate-All-Around Transistors

SANTA CLARA, Calif., April 21, 2022 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today introduced innovations that help customers continue 2D scaling with EUV and detailed the industry’s broadest ...
NextBigFuture

Intel 22nm 3-D Tri-Gate Transistor Technology

* The transition to 3-D continues the pace of technology advancement, fueling Moore’s Law for years to come. * An unprecedented combination of performance improvement and power reduction to enable new ...
Semiconductor Engineering

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
ZDNet

AMD explores triple-gate transistors

Advanced Micro Devices on Thursday unveiled an experimental transistor with three gates, in a continued effort to find ways to increase performance while conserving electricity. The transistor, which ...
Electronic Design

Surrounding Gate Transistors May Improve DRAM

DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...