EDN

SiC modules simplify high-voltage topologies

Wolfspeed’s 3.3-kV SiC power modules target AI data centers, renewable energy systems, and grid infrastructure.
Electronic Design

Half-Bridge GaN FET Module Comes In QFN

1. Simplified diagram of the LMG5200 GaN FET power stage. The LMG5200 is a complete, reliable power stage, consisting of a performance optimized driver and power GaN FET. All devices are mounted on a ...
EDN

3-Phase Bridge MOSFET Power Module

The MSK3003 is a 3-phase bridge MOSFET power module that employs space efficient isolated ceramic tab power SIP package. This device interfaces directly with most brushless motor drive IC’s without ...
Machine Design

1.7 kV SiC Half Bridge Module Simplifies Two-Level Topologies

Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
Business Wire

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
Electronic Design

All-SiC Power Module Produces 1.7 kV

Cree, Inc. released the industry's first all-SiC 1.7 kV power module in an industry standard 62 mm housing. Powered by Cree's C2MT large area SiC chip technology, the half-bridge module exhibits an 8 ...