After more than a decade of research and development, Tokyo Electron Miyagi Ltd. has introduced an innovative semiconductor etching method that achieves etch rates up to five times faster than ...
A simple plasma-based edge termination approach yields 10 kV-class GaN diodes with a lateral geometry.
IMiF strengthens its GaN research infrastructure with the addition of a Samco ICP-RIE platform, enabling more advanced ...
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