Microchip Technology (Nasdaq: MCHP) today announces the availability of its new 3.3 kV HV ‑ D3 mSiC ® Power Modules, designed to simplify and accelerate the adoption of solid-state transformers (SSTs) ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
ON Semiconductor has announced two 1200-V silicon carbide (SiC) MOSFET 2-pack modules for the electric vehicle (EV) market, ahead of APEC 2021. The SiC MOSFET modules, based on planar technology, can ...
The MSK3004 is an H-bridge MOSFET power module available in a space efficient isolated ceramic tab power SIP package. This device contains P-channel MOSFETS for the top transistors and N-channel ...
SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC ...
SemiQ has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable lower cost and more compact system-level designs at large scale. 1200 V SiC ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
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ROHM has integrated VCSEL technology with MOSFET drivers in a module to achieve the shorter pulses and high output required for more accurate sensing. Conventionally, in VCSEL-equipped laser light ...
ON Semiconductor has brought out a pair of 1200V SiC MOSFET 2-PACK modules for the EV charger market. EC charging stations require power levels in excess of 350 kW with efficiencies of 95% becoming ...
UNTERHACHING, GERMANY: The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes. As the switching performance ...
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