The switching speed of a power MOSFET charge-controlled device depends on the speed with which an associated gate driver circuit can charge its input capacitance. For the last 20 years, many excellent ...
The IRS26310DJPbF integrates power MOSFET and IGBT gate drivers with three high-side and three low-side referenced output channels to provide 200mA/350mA drive current at up to 20 V MOS gate drive ...
IR’s latest high-voltage gate drivers are ideal for three-phase applications that require industrial level ruggedness. These new ICs feature IR’s proprietary negative Vs immunity circuitry, allowing ...
For the PDF version of this article, click here. The phase-shifted full bridge with current doubler output stage is a popular power supply topology in high-power and low-voltage, high-current ...
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