Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in ...

Silicon carbide (SiC) has proven to be the ideal material for high power and high voltage devices. However, it is extremely important that devices be reliable, and we are not only referring to ...

The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...

Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...

TORRANCE, Calif., May 05, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride ...

While the electric-vehicle market continues to grow, challenges remain to achieve widespread adoption. One trend to address those issues is the development of 800-V EV bus drive systems based on ...