There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

European Union-funded project seeks to rearchitect chips to stop energy "leakage" and make everyday electronics, from cell phones to supercomputers, 10 times more energy efficient. Martin LaMonica is ...

For nearly two decades, two-dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy-efficient ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

A tough challenge for test engineers is explored in terms of test methods, pitfalls, and measurement errors. For the test engineer, RF and microwave power amplifier testing imposes unique challenges.

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...

BENGALURU: Researchers from the Indian Institute of Science (IISc) have reported a breakthrough in the design of gallium nitride (GaN) power transistors, a development that could help accelerate the ...

Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...