CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...
UNTERHACHING, Germany--(BUSINESS WIRE)--Vincotech, a supplier of module-based solutions for power electronics, today announced the launch of new neutral-point-clamped power modules featuring the ...
Development engineers working on the design of cost-efficient power electronic converters used in electrical drives, UPSs, welding machines or inductive heating systems depend on reliable and robust ...
1SP0635 SCALE-2 Plug-and-Play drivers safely and reliably drive 130 x 140 mm and 190 x 140 mm high-voltage and high-power IGBT modules ranging from 1200 V to 3300 V. They are optimised for use in high ...
Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...
The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...
As the relatively mature wire-bonding technology continues to advance, it has become fully suitable for processing automotive silicon-based IGBT modules, and SiC (silicon carbide) power modules and is ...
The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...
(Image courtesy of Elsevier Publishing). Who else would you want to author a book about the IGBT (insulated gate bipolar transistor) than its inventor, Dr. B. Jayant Baliga? This invention is widely ...
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