During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain ...

ATPG targets faults at IC-gate boundaries, but 50% of defects are located within cells. Learn how cell-aware ATPG and user-defined fault models help to ferret out these hard-to-squash bugs.